Single crystal of the layered compound TlGaS₂ were grown by direct synthesis of their constituents. Their electrical conductivity and Hall effect was studied as a function of the temperature, perpendicularly and parallel to the layer planes and it proved to be highly anisotropic. The Hall effect measurements revealed the extrinsic    p-type conduction with an acceptor impurity level located at 0.586eV for σ_⊥and 0.43eV for σ_// above the valence band maximum. The variation of the Hall mobility as well as the carrier concentration with temperature was investigated. The scattering mechanism of the carrier in the whole temperature range of investigation was checked. The anisotropic factor was also estimated and its temperature dependence was illustrated.   

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1. Temperature dependence of the electrical conductivity and Hall effect of thallium gallium disulphide single crystal