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Growth and properties of epitaxial single and multi-layer silicene

Patrick Vogt 1Andrea Resta 2Thomas Bruhn 1,2Paola De Padova 3Guy Le Lay 2,3

1. Technische Universität Berlin, Institute for Solid State Physics, Hardenbergstr. 36, Berlin 10623, Germany
2. Aix-Marseille University, CNRS-CINaM, Marseille 3288, France
3. CNR-ISM, Roma 00016, Italy


Since the discovery of graphene enormous efforts have been invested to search for other similar 2-dimensional materials, especially silicene, a 2D structure of Si atoms in a honeycomb-like arrangement. Silicene, a novel silicon allotrope, which does not exist in nature, was theoretically conjectured a few years ago [1] and was recently synthesized and experimentally investigated [2]. This new form of silicon has recently attracted considerable interest, because its topology confers to it the same remarkable electronic properties as those of graphene, with the potential advantage of being easily integrated in current Si-based nano/micro-electronics. Different technological applications have been suggested, such as gated silicene devices with a tunable electronic band gap [3] or spintronic applications [4].

We will discuss the epitaxial formation of single layer silicene on Ag substrates and its structural and electronic properties. Based on these results we will look at the growth of silicene multi-layers which can be explained by stacking of single silicene sheets. Different experimental techniques are used to investigate atomic structure and electronic properties of this layered system and to discuss its similarities to graphite. The formation of graphite-like silicon structures could open new possibilities for the technological application of this 2D material.

1. G. G. Guzmán-Verri, L. C. Lew Yan Voon, Phys. Rev. B 76, 075131 (2007); S. Lebègue and O. Eriksson, Phys. Rev. B, 79 115409 (2009); S. Cahangirov et al., Phys. Rev. Lett. 102, 236804 (2009).

2. P. Vogt et al., Phys. Rev. Lett. 108, 55501 (2012); C.-L. Lin et al., Appl. Phys. Exp. 5, 045802 (2012); A. Fleurence et al.,Phys. Rev. Lett. 108, 245501 (2012); L. Chen et al., Phys. Rev. Lett. 109, 56804 (2012); N. Zeyuan et al., Nano Lett. 12, 13 (2012); J. Gao, J. Zhao, Sci. Rep. 2, 1 (2012).

3. Z. Ni et al., Nano Lett. 12, 113 (2012).

4. Wei-Feng Tsai et al., Nat. Commun. 4, 1500 (2013)


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Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 9, by Patrick Vogt
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-05-06 09:14
Revised:   2013-05-08 12:28