Demand for high quality sapphire crystals grew ten folds within the last few years. Starting raw material significantly affects the quality of grown sapphire. Historically Vermeil crackles have been used to produce sapphire.  Due to uncontrolled quality of Vermeil crackles it was challenging to grow sapphire with high and predictable yield.

EMT developed and patented plasma enhanced method to produce high purity high density (HPDA^R) raw material ( purity more then 99.999%) to be used as starting material to grow sapphire crystals in which aluminum oxide is melted by a high temperature  (> 10,000 ^oC) plasma torch.  Optimum Al/O composition in melted HPDA is achieved by selecting proper gases combination that forms plasma.  There is no hydrogen involved in the melting process.  Water residual from starting material evaporates in high temperature plasma.

Details of the effect of the raw material produced via our patented technology on the properties of grown sapphire will be discussed.

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