Hydride Vapor Phase Epitaxy (HVPE) is an effective way to fabricate GaN substrate, however the big chanlenges are the residual stress and high dislocation density in GaN crystal compared with those grown by ammonothermal and Na-flux methods. In this work, we reported growth interface engineering in HVPE to control the stress and the threading dislocations in GaN crystals. Bulk GaN crystals with dislocation density in the order of 10⁴cm^-2 were demonstrated by HVPE. The mechanical properties dislocation in GaN were investigated by nanoidentation and cathodoluminescence. It was found that dislocation loops could multiply and move from plane to plane by cross slip, accomodating a wide plastic deformation in GaN during indentation. This mechanism is closely related to the threading dislocation generation during heteroepitaxial growth in large lattice mismatch system. The local carrier properties, including minority diffusion lengths and surface recombination velocities, were measured at single thread dislocations local in GaN by a combination of surface photovoltage spectroscopy and Kelvin probe force microscopy.

1. PRESENTATION: Characterization of dislocations in bulk GaN grown by HVPE, PDF document, version 1.5, 2.2MB

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