Nanowires (NWs) of III–V semiconductor compounds are promising building blocks for future nanophotonic and nanoelectronic devices and functional photonic circuits. III–V NWs are usually fabricated by different epitaxy techniques via the so-called vapor–liquid–solid mechanism activated by a metal (usually Au) catalyst. Nucleation process is of paramount importance in this case. These processes determined the NW crystal structure and therefore its physical properties.

This paper is devoted to study of nucleation during the NW growth. In our model we assume that growth proceeds in layer-by-layer regime in monocentric mode. Also we suggest that the time interval between two nucleation events is much larger than overgrowth time. Under these assumptions the nucleation statistics in nanowires with monocentric growth regime has been studied theoretically. It has been shown that the small size of droplet and its depletion cause anticorrelation of nucleation events and therefore suppress Poisson variation in the nanowire lengths. The dependence of the nanowire length dispersion on the growth rate and radius has been established. It has been shown that dispersion of nanowire length increase with increasing of evaporation rate from the droplet.

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