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Crystal Growth, Defects and Laser Action of Yb:YxLu1-xVO4 Mixed Crystals

Degao Zhong 

Qingdao University, College of Physics, Qingdao 0086-0532, China

Abstract

A new series of Yb:YxLu1-xVO4 mixed laser crystals were grown by the Czochralski method. The polarized absorption spectra were measured at room temperature. The continuous-wave (cw) laser action of diode-pumped Yb:YxLu1-xVO4 mixed crystal laser was reported. The laser emission spectrum and relationship curve between the output power and absorbed pump power (Pabs) were measured. The optical quality of Yb:YxLu1-xVO4 mixed crystal was determined using optical interferometer. The crystal defects were studied by chemical etching and X-ray topography.

 

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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 2, by Degao Zhong
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-15 14:24
Revised:   2013-04-15 14:24