The investigation on size effect of silicon/quartz nanostructure has been performed using micro-Raman spectroscopic technique. Micro Raman spectral measurements of silicon on quartz substrate prepared by the plasma enhanced chemical vapor deposition method (PECVD) with various deposition powers like 15, 30 and 50W have been made. Micro-Raman spectra of silicon show the T2g Raman active mode at 494, 499 and 504 cm-1 for these three different samples. The observed shift from 521 cm-1 (crystalline Si Raman line) indicates the samples are amorphous and crystalline in nature. We could notice large Raman mode shifts, up to 27 cm-1 and broadening up to 19 cm-1 of the T2g Raman-active mode, which is attributed to phonon confinement effect. The analysis of micro-Raman scattering data is useful to understand the role of deposition condition of the silicon sample.

1. POSTER: Micro-Raman scattering studies on silicon/quartz nanostructure, Microsoft Office Document, 0MB

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