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Photoluminescence of CdS nanocrystals doped with Cu or Zn

Sergiy I. Budzulyak 1,  Dmytro V. Korbutyak 1,  Andrij O. Kuryk 1,  Oleg M. Shevchuk 2,  Stanislav V. Tokarev 2

1. V. Lashkaryov Institute of Semiconductor Physics NASU (ISP), 41, pr. Nauki, Kiev 03028, Ukraine
2. Lviv Polytechnic National University, 12 Bandera, Lviv 79013, Ukraine

Abstract

Formation of the thin polymeric films with the embedded nanoclusters doped on the basis of CdS/ZnS and CdS/CuS was performed via several stages: At the first stage a solution of the polyfunctional copolymer (PFC) poly [(butyl acrylate)-co-(5-tert-butylperoxy-5-methylhex-1-en-3-yne)-co-(maleic anhydride)] modified dimethylaminoethanol, polyethylene glycol PEG-200 (taken in the amount of 10% respectively to PFK) and a mixture of two salts Cadmium Acetate Cd(Ac)2 with either Cu(Ac)2 or Zn(Ac)2 in dimethylformamide at their ratio as [Cd(Ac)2]:[Me(Ac)2]=99:1÷90:10. Theoretical content of МеS in the film was of 20%.

On glass plates from the obtained solutions were spin-coated the thin polymeric films containing metal ions bonded with polymeric matrix due to formation of both ionic and coordinate bonds. The film thickness was in average of ≈ 20 nm. Crosslinking of the films obtained occurred at their heating (T=100 ÷ 120˚C) as results of an esterification reaction between hydroxyl groups of bifunctional PEG-200 and the maleic anhydride moieties in PFC. At the final stage the CdS nanoclusters doped were formed by treatment of the films by Hydrogen Sulfide in gas phase.

Absorption maxima in the area of 2.6-2.85 eV depending on the nature and concentration of doping metal cations were observed in the UV-vis spectra of obtained thin films.

 In the spectra of photoluminescence (PL) of the samples were observed two broad bands: one in the spectral region (1,6 - 2,3) eV, the second - in the (2,4 - 3,4) eV. The first is caused by structural defects in QDs CdS, the second (high-energy, with energy quanta greater than band gap of bulk CdS) related to the radiative annihilation of excitons. Characteristically, the introduction of Cu impurities in CdS QDs led to the quenching of "defect" PL band (1,6 - 2,3) eV while increasing the intensity of high-energy (2,4 - 3,4) eV PL band. This means that Cu enhances structural perfection CdS QDs. Introduction Zn impurities in QDs CdS, in contrast, did not lead to improved structural characteristics of QDs, as evidenced by the increase in the intensity of "defect" PL band with increasing zinc content of impurities.

 

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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 8, by Sergiy I. Budzulyak
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-12 16:15
Revised:   2013-07-29 23:17