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Growth of GaN on Si – an overview

Alois Krost 

Otto-von-Guericke-Universität Magdeburg, Institut für Experimentelle Physik, Universitätsplatz 2, Magdeburg 39106, Germany

Abstract
Growth of GaN on various silicon surfaces by MOVPE is reviewed. Currently, GaN-on-Si(111) is considered to be the most promising material for high power electronic applications. Another major application for GaN-on-Si(111) will be high-power LEDs for general lighting. First high power white LEDs suitable for general lighting are already in production now. Several groups have already demonstrated that high quality GaN on Si can be grown by MOVPE on 150 mm diameter substrates and that growth is easier than on large diameter sapphire. Using in-situ curvature measurement technique we observed the strain state of group-III-nitride layers during growth and established a process for growing thick, crack-free GaN layers with a quality comparable to that on sapphire. Growth on Si(100), (110), and semipolar GaN on Si(11h) surfaces will be reported, too.


 

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Presentation: Plenary Lecture at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Plenary Session, by Alois Krost
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-09 11:00
Revised:   2013-04-09 16:19