Nanowires have attracted increasing research interest during the recent years due to their electronic and geometrical advantages compared to bulk materials. In nanowires, wurtzite crystal phase has been observed in several materials even though zinc blende is the predominant crystal phase in bulk of the same materials. Gallium phosphide (GaP) has been predicted to have a direct band gap in the wurtzite crystal phase by band structure calculations, which makes it interesting for use in optoelectronic devices. Here, we report on the synthesis of non-tapered wurtzite GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the wurtzite crystal phase in the GaP nanowires preferentially grew at relatively high growth temperatures around 600 °C where tapering normally occur. Transmission electron microscopy measurements confirmed non-tapered wurtzite GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the band gap.

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