In heteroepitaxial growth, deposited adatoms start solidification by contacting with a substrate. Due to misfit or misorientations between the adsorbate and substrate,  crystals started to grow from different contact points may be incoherent each other. We consider an extreme case that each contact point initiates separate crystal domain, and study their competition during deposition growth by kinetic Monte Carlo simulations of a lattice-gas system.
In a ballistic deposition (BD) model, a deposited adatom freezes at a position of a first contact with substrate or already crystallized adatoms. The number density of domains ρ decreases as the height h of the BD aggregate increases in a power law as ρ ∝ h^-γ. The value of the exponent is γ ≅ 0.67 in a two-dimensional BD model, and γ ≅ 1.1 in a three-dimensional BD. The results agree with theoretical estimation that the exponent γ is inversely proportional to the dynamical exponent z of the d-dimensional BD growth front as γ = (d-1)/z. We study further the effect of surface diffusion on the exponent γ.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/29127 must be provided.

1. Composition of a binary regular solid solution during its growth studied by the Monte Carlo simulation and the mean field approximation
2. Crystallization and annealing of colloidal crystals under gravitational fields
3. Effect of immobile impurities on behaviors of a two-dimensional island
4. Appearance of a homochiral state in crystallization by random fluctuation
5. Ordering of Brownian Particles from Walls Due to an External Force
6. Dynamics of Si island during evaporation