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Growth and high temperature properties of langasite structure crystal Ca3Ta(Al0.9Ga0.1)3Si2O14
|Kainan Xiong 2, Yanqing Zheng 1, Xiaoniu Tu 2, Shujun Zhang 3, Haikuan Kong 2, Erwei Shi 2|
1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
Piezoelectric crystals of langasite, langatate and Ca3TaGa3Si2O14 (CTGS) with langasite structure were broadly used in high temperature sensors in recent years. The high content of gallium made these crystals much more expensive compared than quartz. A bulk single crystal Ca3Ta(Al0.9Ga0.1)3Si2O14 (CTAGS) of langasite structure in which 90% percent of gallium was replaced by aluminum was successfully grown by Czochralski technique. The as-grown CTAGS crystal has similar growth habits of CTGS with the dimensions of 20 mm in thickness, 70 mm in width and 80 mm in length. The piezoelectric constant d11, the dielectric constant ε11, the electromechanical coupling coefficient k12, the mechanical quality factor Q, the electric resistivity, and dielectric loss of x-cut plate of CTAGS were measured under different temperatures from room temperature up to 900ºC. The d11 rise from 3.99 pC/N to 5.67 pC/N while rise from 13.7% to 15.4%. Compared with reported data, it is found that at temperature below 600ºC, CTAGS crystal has highest resistivity among langasite structure crystals. The advantages of low cost of raw material, easy to grow bulk crystal, combined with the properties of the high resistivity make CTAGS a potential materials for high temperature application.
Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 6, by Yanqing Zheng
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-03-27 09:25 Revised: 2013-03-27 09:28