II-VI compound semiconductor CdTe and ZnTe have attracted much attention in the fields of far-infrared and room temperature radiation detectors, solar cells, terahertz and photorefractive devices, etc. due to its excellent photoelectric properties. Recently, there has been a significant effort in developing CdTe and ZnTe single crystal growth. However, duo to the high melting point, abundance of structure imperfections usually positioned in the crystals when grown according to the stoichiometric composition. Therefore, the resistivity and charge transport behaviors of the crystals were degraded, which has consequently reduced the availability and prevented the wide-spread adoption of CdTe and ZnTe for various general applications.

In this work, CdTe and ZnTe crystals grown by the Te-solvent-vertical Bridgman method were evaluated. The size and density distributions of Te inclusions in CdTe and ZnTe crystals were examined using IR transmission microscopy. Current-voltage curves were measured at room temperature using a Kiethley 6517b picoammeter/ voltage supply. Charge transport mobility and conduction type was identified by Hall-effect measurements at room temperature. Upon comparing the corresponding electric properties and charge transport performance, the cut-off wavelength was analyzed according to the NIR transmittance spectra. In addition, the IR absorption within the wave-number range from 500 to 4000cm^-1 was obtained, which potentially attributed to the shallow level defects.

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1. Coupling effects of Te inclusions and the surrounding extended defects in bulk-grown CdZnTe crystals
2. Te solution growth of twin-free CdMnTe crystal for detector applications