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Exploiting Inherent Thermodynamic Effects in Crystal Growth to Achieve Functionally Graded Thermoelectrics. |
Ellen M. Jensen Hedegaard , Simon Johnsen , Bo B. Iversen |
Center for Materials Crystallography, Dept. of Chemistry, Aarhus University (AU), Langelandsgade 140, Aarhus DK-8000, Denmark |
Abstract |
Exploiting waste heat by means of thermoelectric generators has long been proposed as one of the ways to meet the worlds rising energy demands. However, thermoelectric materials still need improvements to be cost-effective in most applications. Higher efficiency materials could be obtained by optimizing the materials through functionality grading to meet the changing temperature conditions within a thermoelectric leg in operation. The physical parameters that influence the efficiency of a thermoelectric material are all strongly temperature dependent, and consequently the efficiency of a homogeneous material peaks in a narrow temperature interval. By grading these parameters though the material, the temperature at which the efficiency peaks can also be graded. Opposed to most other techniques for functionality grading, graded materials can be achieved in one step though Czochralski or Bridgman/Stockbarger synthesis. It has previously been shown that thermoelectric materials graded in either composition, and thereby band gap [1], or doping [2] can be prepared in this way, but by combining the two effects a potentially significant improvement in efficiency should be achievable. This poster presents the idea behind and preliminary results of a study aiming at identifying and testing material systems capable of being graded in both doping and composition through either Czochralski or Bridgman/Stockbarger crystal growth in such a way that these effects enhance each other, and optimizing the synthesis of these materials. |
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Presentation: Poster at 15th Summer School on Crystal Growth - ISSCG-15, by Ellen M. Jensen HedegaardSee On-line Journal of 15th Summer School on Crystal Growth - ISSCG-15 Submitted: 2013-03-26 15:01 Revised: 2013-03-26 15:42 |