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Crystal Growth of pure and doped Potassium Titanyl Phosphate  single crystal for E-O applications and its characterisation

Rajesh Narayana Perumal ,  Sadhasivam Subramani 

SSN College Of Engineering (SSNCE), Kalavakkam, chennai 603110, India


Nonlinear optics research and its needs require new materials for large variety of processes. The Potassium Titanyl Phosphate (KTP) is well known and prominent commercial material for harmonic generation. The KTP crystal used in integrated optics, optical parametric oscillator and high power laser generation for laser surgery. KTP have transparent through 350 nm to 4500 nm and good optical properties, which makes it is frontier single crystal for second  harmonic generation at 532 nm of Nd-based fundamental lasers. Hydrothermal method also used but the risk is it needs several order pressure to reduce the growth temperature.  Alternatively Flux growth (high temperature solution growth) using to grow Potassium titanyl phosphate material. Flux growth has many sub division and paths to grow crystal but in our investigation Top Seeded Solution Growth is chosen for obtaining good perfection of crystalline materials. The TSSG method is consist several parameters to get ideal technique.

The present investigation gives optimization during the growth of KTP crystal using TSSG technique such as vertical and horizontal temperature gradient optimizations, seed rotations and flow of melt causes the surface of crystal growth, interfacing effects of growing crystal with melt and growth rate, Solvent and solute concentration effects on viscosity and growth characteristics, ionic characteristics with defect relations. The inorganic material potassium titanyl phosphate single crystal has been grown using flux growth technique. The grown crystal analyzed by Atomic Force microscope for surface characteristics. The grown crystal confirmed using elementary dispersive analysis of X-ray (EDAX) and powder X-ray diffraction (XRD). The optical property of the grown crystal was analyzed by UV–vis–NIR, Raman scattering and photoluminescence (PL) spectral measurements. The dielectric measurements were carried out for three crystallographic planes at 10-10MHz frequency and the results discussed. The ferroelectric polarization with applied electric field measured. The indentation measurements were used to analyze the mechanical property of the grown crystal. Overcoming the growth obstacles were discussed as elaborately.


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Related papers

Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 2, by Rajesh Narayana Perumal
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-03-26 10:23
Revised:   2013-03-26 10:23