The article presents an overview of the growth of single crystal bulk semiconductors by liquid phase electroepitaxy (LPEE). The talk covers the LPEE growth of III-V, II-VI, and IV-IV semiconductor materials.

Following a short introduction on early modeling and theoretical studies on LPEE, we will first introduce recent experimental results of the LPEE growth of GaAs/GaInAs single crystals under a static applied magnetic field. Crystal growth experiments carried out have shown that the application of a static magnetic field in the LPEE growth of GaAs increases growth rate very significantly. For instance the LPEE growth rate of GaAs under a 3-A/cm2 electric current density is about 0.5 mm/day. However, the growth under the same electric current is about ten times higher in the presence of a static magnetic field of 4.5 kGauss.  In order to predict such a high growth rate, a continuum model was developed by giving a new definition to the process of electromigration in which a total electric mobility was introduced, i.e., “electromagnetic mobility”. Introduction of the electromagnetic mobility allowed accurate predictions for both the growth rate and the growth interface shape. A thermodynamic and kinetic interpretation for this electromagnetic mobility was also given.  Dimensionless electromagnetic mobility varies with the magnetic field intensity as 1+2B  (up to B=4.5 kGauss).

LPEE growth CdTe single crystal experiments were also carried out. Although experiments led to the growth CdTe crystals of about 2mm thickness, we have failed to find an appropriate contact zone that would lead to a uniform passage of the applied electric current through the seed crystal, and would maintain to a prolong growth for ticker crystals. This issue of contact zone in LPEE growth of CdTe/CdZnTe crystals still remains unresolved.

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