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Step patterns induced by a line source of adatoms |
Makio Uwaha 1, Masashi Kawaguchi 1, Shinji Kondo 1, Hitoshi Miura 2, Masahide Sato 3 |
1. Nagoya University, Department of Physics (NU), Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan |
Abstract |
Being motivated by a comb-like step pattern observed during Ga deposition on Si(111) surfaces[1], we theoretically study growth of a step which is guided by a line adatom source moving in front of the step. The pattern formation in a lattice model[2] and in a phase-field model is discussed. The line source of adatoms located initially next to a straight step moves at a constant speed Vp away from the step. It releases adatoms of the density c =1/2, and makes the step grow. Many intrusions are soon formed by Mullins-Sekerka instability. In growth towards [11] direction, the comb-like step pattern appears with small Vp after coarsening of the pattern via competition of the intrusions. Periodic tips of the comb-like pattern follow the source steadily. With large Vp, a fractal pattern is formed by noise. For the comb pattern, the structure becomes finer with increasing Vp. The period of initial intrusions is given by the capillary length d0 and the diffusion length lD=Ds/Vp as (d0lD)1/2. The period λ of the steady comb-like pattern is controlled by the noise strength Fu. The period becomes logarithmically shorter with increasing the noise: λ~ (d0lD)1/2|lnFu|. Such noise dependence suggests a peculiar mechanism to terminate the coarsening.
Fig.1: Time evolution of an irregular step pattern(upper) and a periodic comb-like pattern(lower). [1] H. Hibino, H. Kageshima and M. Uwaha: Surf. Sci., 602 (2008) 2421. [2] S. Kondo, M. Sato, M. Uwaha and H. Hibino: Phys. Rev. B 84, 045420 (2011). |
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Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 1, by Makio UwahaSee On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17 Submitted: 2013-03-21 09:07 Revised: 2013-07-18 22:43 |