Tin sulfide (SnS) belongs to IV-VI group compound having p-type conduction. SnS is very interesting for the photovoltaic conversion of solar energy into electrical energy, since its band gap of 1.3 eV comparable to that of silicon. Single crystal of SnS were grown by the direct vapor transport (DVT) technique. The grown crystals were characterized to evaluate the composition, structure, morphology, optical and electrical properties using appropriate techniques. The composition analysis indicated that the grown crystals were nearly stoichiometric with Sn-to-S atomic percent ratio of 1.10. Study of their surface morphology revealed the layered type growth mechanisum. The X-ray diffraction analysis shows the grown crystal had orthorhombic structure with (040) orientation. Optical behaviour of SnS single crystal was studied in the range of 200 - 3200 nm. SnS single crystal shows the broad optical absorption in the range of 200 - 1150 nm. They exhibited an indirect optical band gap of 0.77 eV and direct band gap of 1.38 eV. The variation of refractive index (η), extinction coefficient (k), optical conductivity (σ), real and imaginary dielectric constants (ε_r and ε_i) with incident photon energy was studied using absorption spectra. The thermoelectric power measurement of SnS single crystal showed that the thermo emf increases with temperature. The four probe resistivity measurements from 304K to 474K shows that the resistivity decrease with temperature increase. The carrier concentration and conduction behaviour of SnS single crystal was evaluated using the Hall effect measurement at 304K. Analysis of optical absorption and reflectance spectra showed the presence of a wide absorption band in wavelength range 200 - 1150 nm, which closely matches with a significant part of solar radiation spectrum. The obtained results were discussed in details.           

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