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Contactless methods of both conductivity and sheet resistance measurements of semiconductor crystals, wafers and epitaxial films deposited on semi-insulating substrates

Jerzy A. Krupka 

Politechnika Warszawska (PW), pl.Politechniki, Warszawa 00-661, Poland

Abstract

These days contactless methods of conductivity measurements become more and more important due to the progress in materials technology and development of new materials intended for electronic industry such as GaN, SiC, graphene, etc. Some of these materials like GaN, SiC even if they are conducting they are not measurable with conventional four point probe technique. Furthermore contactless measurement techniques are fast and non destructive. Appropriate choice among these techniques makes it possible measurements of materials having resistivity in the range of more than 16 decades from 10-6 Wcm to 1012 Wcm, and sheet resistances in the range from 10-6 W to 108 W. This presentation will overview the last achievements on this topic, especially microwave techniques that have been recently developed by the author.

 

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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 5, by Jerzy A. Krupka
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-01-18 10:36
Revised:   2013-01-18 10:37