The good quality single crystals of Ru doped congruent LiNbO₃ (LN) have been successfully grown by Czochralski (Cz) technique using Cyberstar make automatic diameter controlling system with RF furnace. The axial and radial gradient of the RF furnace was controlled properly in order to get crack free single crystal. The wafer was cut from the grown single crystals at different axial positions and then subjected to various characterization analyses in order to find its suitability for device fabrications. The concentration of the dopant was assessed by inductively coupled plasma mass spectroscopy (ICP-MS) and found that upper portion of the wafer contains more Ru in comparison with the other part of the wafers, which was expected because of Ru evaporation and it is in agreement with the reported literatures. To assess the crystalline perfection, the wafers which were cut from the different axial positions were subjected to high-resolution X-ray diffractometry (HRXRD) by employing an in-house developed multicrystal X-ray diffractometer. From this analysis one can understand that the as-grown cLN crystal is having excellent perfection with single and sharp diffraction curve (DC), whereas, Ru-doped specimens can be clearly visualized by the broadening of DC. The top and bottom portions of the same ingot show distinct nature of defect structure. The significant change observed in the absorption coefficient and band gap analysis proven that the concentration variation of Ru play a major role in LN application. The refractive index measurements were carried out to observe Ru effect on different pieces of crystal while concentration varies using a prism coupler technique.  The optical homogeneity of the grown specimen was examined by using conoscopy method and observed that the grown crystals are having good optical homogeneity, free from residual strain and at the same time Ru doping does not influence its optic sign.

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