MICROWAVE RESPONSE OF La[2/3]Ca[1/3]MnO[3] THIN FILMS AND
La[2/3]Ca[1/3]MnO[3]/LaNiO[3] HETEROSTRUCTURES,
S.Asmontas, J.Gradauskas, A.Lisauskas, V.Lisauskas, A.Lucun,
A.Oginskis, A.Suziedelis, B.Vengalis, Semiconductor Physics Institute,
A.Gostauto 11, Vilnius LT-2600, Lithuania
La[2/3]Ca[1/3]MnO[3] (LCMO) thin films with thickness d = 30¸300 nm were
grown by a reactive dc magnetron sputtering on MgO(100), lattice- matched
NdGaO[3](100) substrates and highly conductive patterned LaNiO[3](100)
underlayers. The microwave response, nonlinear electrical properties and
magnetoresistivity were studied for the prepared LCMO films of various
crystalline quality and the LCMO/LaNiO[3] bilayers both above and below the
paramagnetic (PM) to ferromagnetic (FM) transition temperature T[C] ( @
150¸250 K). Dynamics of the electrical resistance change observed for high
quality epitaxial LCMO films below T[C] revealed three relaxation processes
with the characteristic durations t[1]@3 ms, t[2]@3÷5 ms, and t[3]Ł0.5 ms.
The experimental findings were understood assuming coexistence of the FM-PM
phase mixture in the films at T<T[C]. Strong nonlinear microwave response
observed for the LCMO/LaNiO[3] bilayer film containing an array of the
LCMO/LaNiO[3 ]heterojunctions was explained taking into account strong
electrical field effect at the interfaces.

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