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Performance study of monolithic line radiation detector based on semi-insulating GaAs using X-rays source

František Dubecký 1Bohumír Zako 1Pavol Ščepko 3Valerij Melov 2Martin Herms 2Haupt Lothar 2

1. Slovak Academy of Sciences, Institute of Electrical Engineering (IEE SAS), Dubravska cesta 9, Bratislava 841 04, Slovakia (Slovak Rep.)
2. Fraunhofer Institute for Nondestructive Testing (EADQ) (EADQ), Kruegerstrasse 22, Dresden 01326, Germany
3. T&N System Ltd., Severná 8, Banská Bystrica 97401, Slovakia (Slovak Rep.)


During last decade a great effort has been concentrated to development of radiation detectors based on bulk semi-insulating (SI) GaAs due to its low cost coupled with good properties in detection of X- and gamma-radiation [1, 2].
Digital X-ray testing and imaging present the most perspective field of its application. The main advantages include: i) higher sensitivity in comparison to photographic film due to better absorption, ii) suppression of low-frequency noise by pulse-processing front-end electronics, iii) linear behaviour over entire dynamic range, iv) setting of a threshold allows to discriminate (not only) noise from signal, and also photon energies, v) multiple thresholds can be implemented, which open qualitatively new kind of X-ray imaging at various photon energies [3].
Our effort is devoted to development of X-ray testing and imaging insturmentation based on the SI GaAs (InP) monolithic line detectors with 1D scanning system.
In this work, results of experimental performance study of SI GaAs monolithic line detector are demonstrated. SI GaAs based chip consists of 32 strip detectors with pitch 0.25 mm and strip area 0.2*1.25/2.5 mm2. Chip can be irradiated from the edge or the face - contact side. 24 strip detectors are directly coupled to 24 channel electronic read-out system. We study the response of SI GaAs line detector to X-ray radiation (including focused beam) with emphasize to evaluate detection efficiency, spatial resolution and interstrip crosstalk following its imaging ability.

[1] Schlessinger T. E. and James R. B.: Semiconductor for room temperature nuclear detector application, Semiconductors and Semimetals. Vol. 43, Academic Press, San Diego (1995).
[2] McGregor D. S. and Hermon H.: Nucl. Instr. Meth. A395 (1997) 101.
[3] Da Via C., et al.: Nucl. Instr. Meth. A395 (1997) 148.


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Presentation: poster at E-MRS Fall Meeting 2004, Symposium D, by František Dubecký
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-08-18 20:06
Revised:   2009-06-08 12:55