The interest in CdTe and (Cd,Zn)Te detectors for application in the area of security is huge. The detectors can be operated at room temperature, the detection efficiency is high and the energy resolution is close to cooled germanium detector systems. However, there are still several limitations due to the material properties, particularly the crystal quality and uniformity of CdTe as well as of (Cd,Zn)Te. One reason for these limitations is the formation of defects and compensation mechanism. A compensation model is presented and discussed for doping with different elements (In, Cl, Sn, Ge) to show the influence of the compensation mechanism on the detector performance. The material properties are presented for (Cd,Zn)Te and CdTe crystals. All the crystals were grown in Freiburg from the melt by the vertical Bridgman method. The materials properties were obtained by Spatial resolved Photoluminescence measurements and Contactless Resistivity Mappings COREMA. It could be shown that it is possible to grow high resistivity material up to 10¹⁰ Ωcm and a mobility-lifetime-product for electrons of 10^-3 cm²/V. The results of impurity analysis using Glow Discharge Mass Spectroscopy and the PICTS data of trapping levels identified a intrinsic deep level in the middle of the band gap. The detector performance will be presented for planar detectors and large volume detectors with a thickness up to 10 mm.

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