With the current developments in micro-electronics and interconnect technologies new and exciting possibilities exists for developing revolutionary new sensors for radiation imaging. The deep sub-micron CMOS technologies (0.13 micron or 0.09 micron) allow one to integrate many signal processing steps into small cells (pixels), resulting in intelligent pixel array sensors. At the same time, new developments in interconnect technologies, driven by the packaging industry (mobile phones for example), allow for the development of stacked modules. The combination of these two developments can provide highly integrated and intelligent sensors. Therefore, the technology is potentially available. Whether, these technologies will also be available for the scientific community is uncertain, simply because of the exponential increase in development costs. Europe has traditionally had a world leading position in "sensor" development, in part due to large scale scientific projects like CERN. To keep this world leading position European research, will have to work together with European industry and European policy makers and funding agencies.
The discussion will be introduced by short presentation to set the scene.

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1. Area detectors for synchrotron radiation detection - applications in crystallography