In the paper we present a comprehensive simulation method to evaluate X-ray imaging response of a silicon strip detector with particular emphesis on the charge sharing effects. The simulation steps include:
- generation of parameterised charge distribution in the detector sensitive volume based on cross sections for basic mechanisms: photoabsorption, Compton scattering and coherent scattering,
- transport of generated charge in the detector volume, taking into account drift in the electric field and diffusion,
- generation of charges induced in the readout strips,
- adding random electronic noise to the electronic signals,
- discrimination of electronic signals including the electronic noise,
- determination of count efficiency vs position of incident photons as a function of the discrimination threshold.

The developed simulation tools are used for optimising the design and operating parameters of a silicon strip detector to be used as 1-D position sensitive device in experimental techniques like X-ray powder diffraction, X-ray high-resolution diffraction, and small angle X-ray scattering, using laboratory X-ray sources. The response of the detector as a function of the detector bias and discrimination threshold has been investigated for two geometrical configurations: photons incident from the strip side and from the back side. The simulation results for a particular detector design are discussed and comparison with measurements of the detector response is presented.

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