One-dimensional (1D) wide band-gap nanowhiskers have attracted much interest because their remarkable physical and chemical properties. Fabrication of nanowires of SiC, GaN, ZnSe and ZnO has been reported. Among them 1D ZnO nanostructures attract special attention due to their large excitonic binding energy of 60 meV and high mechanical and thermal stabilities. Recently, ZnO nanostructures including nanowires, nanobelts, and nanotubes, have been fabricated by various methods.Electronic and optical devices based on 1D ZnO nanostructures, such as lasers, sensors, light-emitting diodes, and field emission devices, were studied.
In this report, we present a simple physical vapor-phase transport technique of synthesizing single crystalline ZnO nanorods. These nanorods are supported by different kinds of substrates: Si, Au/Si, ZnO/Si and Au/ZnO/Si. ZnO thin film deposited on Si substrate can be used as a buffer layer and gold can be deposited in order to form nanosized particles. When we only use a thin film of ZnO as a buffer layer or Au as a catalyst the ZnO nanorods grew randomly on the substrate surface. But with using both buffer layer and catalyst, the growth of nanorods was almost vertically aligned perpendicularly to the substrate and the density of rods was higher than other samples with low size distribution. The high resolution transmission electron microscopy, electron diffraction and X-Ray diffraction results show that all the ZnO nanorods are single crystal with preferential orientation. A boundary assistant nucleation mechanism followed by a vapor-solid (VS) process was proposed to explain the nanorod growth. In addition, a strong excitonic emission located at 3.25 eV was observed in room-temperature photoluminescence measurements.

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