For many years, the investigation of group-III metals on Si surfaces has been one of the typical studies in surface science. This system exhibits an abundance of surface structures depending on the coverage and the annealing process. Al is one of the group-III metals and a particularly important material for the device applications. But atomic structure of the low-coverage Al absorbed on Si(001) surface is still under debate. Thus, initial stages of Al growth on Si(001) surface have been studied using low-energy electron diffraction (LEED) and coaxial impact collision ion scattering spectroscopy (CAICISS). Because the low energy ion which is sent to the target material from ion source does not deeply penetrate the sample, CAICISS has been known the very surface-sensitive technique.
A standard cleaning procedure allowed us to obtain sharp (2X1) LEED patterns of Si(001) surface mainly free of contamination. Al was evaporated from a heated tungsten filament onto the substrate at the well defined conditions. After that, we investigate the atomic structure of Al on Si(001) surface. To confirm our results definitely, computer simulations with a two-dimension trajectory count method were also performed and compared with experimental results.

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