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Infrared radiation effects in TiO2 nanostructured films

valerio dallacasa 2fabio dallacasa 1

1. University of Verona, Scientific and Technological Department, Verona, Italy
2. University of Verona, Scientific and Technological Department, Laboratory of Materials Analysis, Verona, Italy

Abstract

Attention is being paid to TiO2 oxide in either rutile or anatase phases for various applications such as its use in low-cost photovoltaic devices, the photodegradation of pollutants in air and the photoelectrochemical production of hydrogen. One of the principal attraction of this oxide is its tendency to aggregate in mesosocopic textured nanocrystallytes in films adhered to suitable substrates. We present results of the influence of infrared radiation on metal-TiO2-metal devices where the metal electrodes are composed of conducting ITO-based glass substrates. An 10-30 microns oxide film is obtained by deposition of TiO2 from a colloidal suspension followed by heating at high temperature which ensures sinterization of grains. The morphology of the film has been studied by AFM analysis and results in an array of 30 nm grains weakly separated, with resistance 100 Ohm per cm2. *-Under solar light illumination these devices show an open-circuit voltage of few millivolts. In the dark the device turns to be unbiased exhibiting strong sensitivity dc voltages induced by the infrared radiation. The principal characteristics of this response i.e its dependence on the infrared ac amplitude and frequency and oscillatory behaviour and polarity reversibility, suggest the existence of a Josephson effect. At infrared wavelengths the dielectric constant of bulk oxide is negative, suggesting that grains may have metallic character, so that we can explain the results as being due to pair tunneling between high Tc TiO2 grains.

 

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium A, by valerio dallacasa
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-28 17:13
Revised:   2009-06-08 12:55