A novel equipment tool to perform electrochemical CV profiling on semiconductor structures is given. The setup is PC controlled and fully automated to handle small sample sizes from some millimetre in diameter up to 6 inch wafers. Fully automated loading of the electrochemical cell, fluid handling, drying and unloading are incorporated into the setup. Using a wafer stepper as an option even surveys on wafer scale are feasible. Especially for the case to profile nitride semiconductors, the hardware makes use of a etch technique named "cyclic oxidation" recently developed by us. This new etch procedure results reproducibly in mirror-like etched surfaces for n-type as well as p-type material. Characterization of various semiconductor samples, including Silicon, III-V-heterostructures and III-Nitrides will presented - showing some typical epitaxial layer structures for LEDs, HEMTs or solar cells.

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1. Electrochemical Etching and CV-Profiling of GaN