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Automated Electrochemical CV-Profiling of semiconductor structures on wafer scale

Thomas Wolff 1Michael Rapp 1Thomas Rotter 2

1. Ingenieurbüro WEP (WEP), Bregstrasse 90, Furtwangen D-78120, Germany
2. Universität Erlangen, Lehrstuhl für Elektronische Bauelemente (LEB), Cauerstrasse 6, Erlangen 91058, Germany


A novel equipment tool to perform electrochemical CV profiling on semiconductor structures is given. The setup is PC controlled and fully automated to handle small sample sizes from some millimetre in diameter up to 6 inch wafers. Fully automated loading of the electrochemical cell, fluid handling, drying and unloading are incorporated into the setup. Using a wafer stepper as an option even surveys on wafer scale are feasible. Especially for the case to profile nitride semiconductors, the hardware makes use of a etch technique named "cyclic oxidation" recently developed by us. This new etch procedure results reproducibly in mirror-like etched surfaces for n-type as well as p-type material. Characterization of various semiconductor samples, including Silicon, III-V-heterostructures and III-Nitrides will presented - showing some typical epitaxial layer structures for LEDs, HEMTs or solar cells.


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Related papers

Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Thomas Wolff
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-26 15:06
Revised:   2009-06-08 12:55