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Elaboration and physical properties of a-plane ZnO layers and nonpolar quantum wells
|Jean-Michel Chauveau 1,2, Monique Teisseire 1, Christian Morhain 1, Christiane Deparis 1, Hyonju Kim-Chauveau 1, Borge Vinter 1,2|
1. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA-CNRS), Rue Bernard Grégory, Parc Sophia-Antipolis, Valbonne 06560, France
ZnO-based quantum wells have attracted much attention in the last few years due to their opportunity of combining band gap engineering, along with large excitonic binding energies. Indeed theoretical works suggest that the 60meV-binding energy of excitons in ZnO, could be further doubled in quantum wells (QWs). Studies on ZnO have mainly focused on films grown in (0001) orientation. In this configuration, the wurtzite ZnO layers exhibit built-in electric fields along the growth direction. Non-polar surfaces are thus of a particular interest since the c-axis lies within the growth plane. As a result it is expected that quantum well structures can be grown without any screening of the exciton binding energies.
Presentation: Invited oral at E-MRS Fall Meeting 2009, Symposium C, by Jean-Michel Chauveau
See On-line Journal of E-MRS Fall Meeting 2009
Submitted: 2009-07-15 17:38 Revised: 2009-07-30 12:34