A realistic AlGaN/GaN heterostructure field-effect transistor model has been developed to predict the drain-source current and small-signal parameters such as drain conductance, transconductance, cut-off frequency and transit time with using nonlinear polarization effects, fully and partially occupied sub-bands in interface quantum well in self-consistent solution of Schrödinger and Poisson equations, taken into account self-heating, linearly voltage drops in ungated regime at device, more accurate mobility model and simulated electron drift velocity. The results out-coming from simulation have a good agreement with exist experimental data especially at linear regime.

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