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Theoretical model of transport characteristics of AlGaN/GaN High electron mobility transistors

Asghar Asgari Tokaldani 1,2L Faraone 2M Kalafi 1

1. Tabriz University, 29 Bahman BLV, Tabriz 56544, Iran
2. The University of Western Australia, Perth, Australia


A realistic AlGaN/GaN heterostructure field-effect transistor model has been developed to predict the drain-source current and small-signal parameters such as drain conductance, transconductance, cut-off frequency and transit time with using nonlinear polarization effects, fully and partially occupied sub-bands in interface quantum well in self-consistent solution of Schrödinger and Poisson equations, taken into account self-heating, linearly voltage drops in ungated regime at device, more accurate mobility model and simulated electron drift velocity. The results out-coming from simulation have a good agreement with exist experimental data especially at linear regime.


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Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Asghar Asgari Tokaldani
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-04 13:36
Revised:   2009-06-08 12:55