In this communication we report on the structural properties of CdO thin films grown on sapphire bearing in mind their possible applications in optoelectronic devices combined with other II-VI oxides. CdO thin films were deposited onto a-plane, c-plane, r-plane and m-plane sapphire substrates by metalorganic vapor-phase epitaxy, using a two-inlet horizontal reactor in which the oxygen and cadmium precursors are separately introduced into the reaction chamber. The CdO layers, which were grown at 383^oC and atmospheric pressure, have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves.
θ-2θ scans have revealed three different CdO orientations namely, (111), (100) and (110), depending on the substrate plane on which the growth has taken place. The orientation relationships between films and substrates have been determined by using the recorded pole figures on several reflections. Finally the crystalline quality of the films has been assessed by measuring the full width at half maximum of the corresponding rocking curves. The results indicate that high quality CdO thin films can be grown on sapphire, stimulating the applications of this material in the field of optoelectronics.

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