Metal doped ZnO (MZO, M = Al, Ag, Li) films were prepared by RF magnetron sputtering on glass substrates with extraordinary designed MZO targets. For the doping sources contained in each MZO targets, we used Al(OH)₃, AgNO₃, LiCl powders by mixing the powders into pure ZnO powder with a various rate (0 ~ 10 wt.%), respectively. We investigated dependences of a kind of dopant and dopant content in target on optical and electrical properties of the as-sputtered MZO films. All MZO films have shown a preferred orientation in the [001] direction. As metal doping amounts and a kind of dopant in the target were changed, the crystallinity and the transmittance as well as optical band gap were changed. Electrical resistivity was also changed with changing metal doping amounts and a kind of dopant. To investigate these phenomena in details, valence band structure of the MZO films were also investigated. In addition, changes of optical band gap as well as resistivity for the MZO films were also explained with the data obtained by XRD, XPS and UPS analysis.

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