The heat released during the annealing of ion-implanted polycrystalline Si (p-Si) is investigated for the first time by nanocalorimetry technique. This later operates on similar principles as Differential Scanning Calorimetry (DSC), but achieves heating rates up to 10⁶ K/s, which allows measuring small amount of heat with high sensitivity. Thus, one can measure in situ the heat released by near-surface processes such as damage annealing in Si implanted at low energy.
30 keV Si^- implantations have been performed at fluences ranging from 6.10¹¹ to 8.10¹⁴ at/cm², and the heat released as a function of temperature during scans between 30 and 450C are presented. It was shown that the heat released has the same shape in all cases, indicating that kinetics of ion implantation defects annealing is independent of fluence. It is also shown that the heat release starts to saturate around a fluence 10¹⁴ at/cm² while for similar fluences, the damage in mono-crystalline Si is far from being saturated, according to channelling measurements. This would imply that further lattice disorder does not occur at the expense of more stored energy. The effect of changing of the heating rate, fluence rate and time evolution on the released heat is also discussed.

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