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Room temperature stimulated emission from self-organized GaN nano-columns grown on (111) Si substrate
|Makoto Tada 1, Akihiko Kikuchi , Katsumi Kishino|
1. Sophia University, 7-1, Koi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
High optical quality self-organized GaN nano-columns were successively grown on (111) Si substrates by an rf-plasma assisted molecular beam epitaxy. The intensity of room temperature photoluminescence (PL) of the nano-columns was 500 times stronger than that of typical GaN film grown by MOCVD. Furthermore, room temperature stimulated emission was observed with a very low threshold excitation power density of 350kW/cm2. This superior optical property of GaN nano-columns on Si is comparable to that of the optimized GaN nano-columns on (0001) sapphire reported recently .
Presentation: oral at E-MRS Fall Meeting 2004, Symposium C, by Akihiko Kikuchi
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-30 12:53 Revised: 2009-06-08 12:55