Organic spintronic devices like spin-valves (SV) are attractive because of large spin relaxation time in π-conjugated molecules and simple device fabrication. Most of the studies of spin injection in organic semiconductors focused on two materials: T6 and Alq₃. We present here results on SV based on a perylene derivative: PTCTE. First the charge drift mobility in films of PTCTE deposited on silicon has been determined by time-of-flight technique in order to check the nature of majority carriers in this material. PTCTE has an electron mobility of 2.56.10^-5 cm²/Vs at E=2.5.10⁵ V/cm which is about the same order of magnitude as the one of the widely used electron transport material Alq₃. Magnetic properties of NiFe and Co were investigated by MOKE and VSM. Our samples have SV behavior (two distinct coercive fields) with magnetically uncoupled electrodes down to 50 nm PTCTE, for thinner organic layers, we observe a loss of SV behavior due to coupling through pinholes or intermixing and degradation of the organic material. Nonlinear I(V) characteristics were observed at 10 K, as well as I(T) curves indicative of semiconducting behavior. The results were correlated with a morphological study by AFM of each layer and with tunneling atomic-force microscopy (TUNA) to probe the inhomogeneity of current flow through the organic spacer.

Acknowledgments

We would like to thank Dr. H. Bock (CRPP)  for his support in PTCTE synthesis.

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