Formation of intermetalic bonds in the Pd-Cu system for MIS sensor application
|Arik Kiv 2, Vyacheslav Golovanov 2, Vladimir G. Litovchenko 1,3|
1. Institute of Semiconductor Physics (ISP), Nauki pr., Kyiv 03028, Ukraine
Formation of Pd-Cu structures in the process of MIS sensors fabrication ensures a high quality of devices if the corresponding electronic states in Pd-Cu system lead to large number of free active bonds on the electrode surface. In the present work the role of Pd surface doping with copper and related mechanisms of adsorption, desorption and bulk dissolution of hydrogen were considered. The theoretical modeling of Pd-Cu alloy was performed using density functional theory combined with coherent potential approximation. The total energy and the partial density of states (PDOS) for PdxCu1-x alloy were analyzed for the Cu atomic fraction varied in the range of 0 - 100 at%.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium A, by Arik Kiv
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-29 18:27 Revised: 2009-06-08 12:55
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