Displacement deposition technique was used to grow copper nanoparticles on porous silicon (PS). PS films were fabricated by electrochemical anodization of monocrystalline Czochralski Si wafers doped with Sb to have 0.01 Ω∙cm resistivity. (100) and (111) oriented wafers were used to investigate an effect of crystallographic orientation of silicon on copper nanoparticles growth process. Self-organization into an array of a regular cylindrical pores with mesosized diameter and 1000 nm depth was achieved under 10-150 mA/cm² current density during 20 sec. Our previous studies have demonstrated deposition of copper nanoclusters onto the walls of partially dissolved pore channels and well faced copper nanoparticles onto an external surface of PS. The aim of the present work is to obtain crystalografic information about the upper copper nanoparticles for its further application. Using different compositions of plating solution and varying time periods and temperature regimes of displacement deposition we have fabricated copper nanoparticles of wide dimensional range from 5 to 250 nm. Usually XRD provides complete crystallographic data obtaining, but in the case of low-size objects this technique has not enough sensitivity. To study nanoparticles of sizes less than 100 nm we have also applied EBSD. It was shown, that copper nanoparticles are crystalline in nature and have cubic face centering elementary cell. In addition, the traces of Cu₂O cubic primitive crystalline phases were determined. For the first time the orientation of separate copper nanoparticles was discovered to be determined by the PS substrate, i.e. epitaxial growth of copper takes place. Further copper nanoparticles coalescence into continuous film leads to losing of copper crystal ability to inherit PS orientation. Discussing of such copper nanoparticles growth behavior and its probably applications are presented.  

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