The magnetic properties of ferromagnetic Ga_1-xMn_xAs thin films with Mn concentration between x=0.03 and 0.08 have been extensively studied in the recent years. These films are characterized by strong magnetocrystalline anisotropy due to  strain induced by the lattice mismatch. Recently, it has been shown additional alloying with P allows reducing the epitaxial strain [1];   it is further expected that  the Curie temperature will be increased above 180K for such alloys [2].

            We have investigated a series of 50 nm thick Ga_1-0,06Mn_0,06As_1-yP_y films prepared by MBE on (100) GaAs substrates by X-band and Q-band ferromagnetic resonance spectroscopy. The concentration of phosphorus was varied from y=0 to 10%. We observe a reorientation of the easy magnetization axis perpendicular to the plane for high concentrations of phosphorus. For intermediate P doping levels strain free layers can be obtained. The anisotropy constants have been studied as a function of temperature with special attention to the layers with low anisotropy. The influence of the phosphorus alloying on the magnetic relaxation via the Gilbert damping factor has equally been investigated.

[1] A. Lemaître et al., Appl. Phys. Lett , 021123 (2008)

[2] J. Masek et al., Phys. Rev. B. 75, 045202 (2007)

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/18421 must be provided.

1. Effect of the hydrostatic pressure on quantum dot - quantum well tunnel injection structures
2. Spin injection and detection in GaMnAs-based tunnel junctions : Theory and Experiments
3. Electron spin relaxation in charge-tunable InAs/GaAs quantum dots