Ferromagnetic Resonance Study of (Ga,Mn)(As,P) thin films with variable P concentrations

Murat Cubukcu 1Kh Khazen 1Hans Jurgen Von Bardeleben 1Jean Louis Cantin 1Aristide Lemaître 2Audrey Miard 2Laurent Travers 2Olivia Mauguin 2Ludovic Largeau 2

1. Institut des nanosciences de Paris (INSP), 140 rue de Lourmel, Paris 75015, France
2. CNRS-Laboratoire de Photonique et Nanostructures (LPN), Route de Nozay, Marcoussis 91460, France


The magnetic properties of ferromagnetic Ga1-xMnxAs thin films with Mn concentration between x=0.03 and 0.08 have been extensively studied in the recent years. These films are characterized by strong magnetocrystalline anisotropy due to  strain induced by the lattice mismatch. Recently, it has been shown additional alloying with P allows reducing the epitaxial strain [1];   it is further expected that  the Curie temperature will be increased above 180K for such alloys [2].

            We have investigated a series of 50 nm thick Ga1-0,06Mn0,06As1-yPy films prepared by MBE on (100) GaAs substrates by X-band and Q-band ferromagnetic resonance spectroscopy. The concentration of phosphorus was varied from y=0 to 10%. We observe a reorientation of the easy magnetization axis perpendicular to the plane for high concentrations of phosphorus. For intermediate P doping levels strain free layers can be obtained. The anisotropy constants have been studied as a function of temperature with special attention to the layers with low anisotropy. The influence of the phosphorus alloying on the magnetic relaxation via the Gilbert damping factor has equally been investigated.

[1] A. Lemaître et al., Appl. Phys. Lett , 021123 (2008)

[2] J. Masek et al., Phys. Rev. B. 75, 045202 (2007)

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Presentation: Oral at E-MRS Fall Meeting 2009, Symposium E, by Murat Cubukcu
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-11 14:27
Revised:   2009-06-07 00:48
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