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Methods of Stress Reduction in the MOCVD Epitaxial Growth of GaN on Silicon
|M. B. Charles , M. J. Kappers , R. Datta , C. J. Humphreys
University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
The use of silicon substrates for GaN based device structures is attractive for many reasons, particularly in terms of cost and scale, but there are also inherent drawbacks. In addition to the large lattice mismatch between silicon and GaN, which causes a high dislocation density, there is a particularly large thermal expansion coefficient mismatch between the two materials. This introduces tensile stress, on cooling from the growth temperature of around 1000C, and can result in wafer bowing and cracking of the GaN.
Presentation: oral at E-MRS Fall Meeting 2004, Symposium C, by M. B. Charles
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-29 11:43 Revised: 2009-06-08 12:55