a-SiO_x:H (x<2) thin film samples prepared in a PECVD system by using SiH₄+CO₂ gas mixture show strong room temperature visible photoluminescence (PL) at a photon energy of 2.1eV. The PL spectrum of a single layer sample was observed to reshape due to the multiple reflection between two interfaces of the film. The orders of the resonance modes in the PL spectrum range of 1.5eV-2.5eV, were calculated to be within a range of m=8 to m=13. The peak energy of the most intense mode (m=11) was observed at 2.1eV and the half width and the quality factor of the microcavity were calculated as Δn=20THz and Q=20, respectively. Two multi-layered distributed Bragg reflectors (10 and 25 layer pairs) were fabricated with two different refractive indices (n₁=3.2 and n₂=2.4) of the layers with λ/4 (λ₀=580nm) optical thickness. The PL intensity was detected increasing in intensity around the photon energy of 2eV and the other modes were suppressed.

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