Six ZnO thin films were grown under different oxygen flow rates by electrochemically onto the commercial indium tin oxide (ITO) substrate. X-ray diffraction (XRD), optical absorption and photoluminescence (PL) measurements were performed on all films. XRD measurements showed that the films are highly (0002) c-axis oriented. It has been observed that the growth rates of the films are highly dependent on the oxygen flow rates. High growth rate is obtained for the mid oxygen flow rates in the cell. Calculated crystallite size values have increasing trend as the oxygen flow rate increases. Absorption measurements have revealed that band gap energy of ZnO thin films are about 3.4 eV. PL measurements showed that the two emissions are observed in all films, which are band to band emission at about 3.37 eV and the so called blue emission at 2.66 eV in ZnO.

Relatively low dose (5x10¹² e^-/cm²) and high energy electron irradiation (HEEI) (12 MeV) experiments were performed on all films. Its effects on the optical and structural characteristics were discussed. So called green emission in ZnO is observed as the effects of HEEI. In addition, annealing process was applied in order to understand the effect on the recovery of the HEEI induced defects.

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