T. Szczepański¹, V. K. Dugaev^1,2, I. Tralle³, J. Barnaś⁴

¹Department of Physics, Rzeszów University of Technology, Rzeszów, Poland

²Department of Physics and CFIF, Instituto Superior Tecnico, Lisbon, Portugal

³Institute of Physics, Rzeszów University, Rzeszów, Poland

⁴Department of Physics, Adam Mickiewicz University, Poznań, Poland

Electronic properties of graphene attracted enormous interest recently due to its real two-dimensionality and very unusual electronic energy spectrum which can be described by the relativistic Weyl model. It is generally believed that graphene may become one of the most important materials for future nanoelectronics.

We have considered transmission of electrons through a graphene nanoribbon being in contact with two-dimensional semiconductor layers. We assumed that the parameters of semiconductor-graphene-semiconductor structure correspond to the quantum regime, where the wavelength of transmitted electrons is of the order of the nanoribbon width. We formulated a model of the electronic band structure of such a system using a set of band parameters corresponding to the electron energy gap, effective mass, and the potential profile across the structure. This allowed us to find the exact solutions for the electron scattering states in the system. We have calculated the reflection and transmission coefficients of electrons as a function of the parameters corresponding to different semiconducting materials in contact with graphene. The main effect is related to the dependence of transmission on the potential profile, which can be easily controlled by applying the gate voltage, and therefore can be used in graphene-based electronic devices.

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