It is known that several A²B⁶ compounds have high temperature stability, radiation hardness, phosphor properties and therefore scintillation and optoelectronic applications. Thus, ZnS crystals use as phosphor in light-emitting and detective devices. The ZnSe crystals apply as X-Ray- and gamma- detectors in medical homographs and airport security systems. The optical and electrical parameters of these crystals depend on structure of defective complexes. These complexes have the spatially-periodic structure.

We have studied the optical and scintillation parameters of ZnSe crystals  grown by Bridgman method. We have studied the structure of luminescence centers and the emission mechanism in ZnSe with donor dopants. Thus luminescence at 300 K is conditioned by defective complexes Donor-V_Zn-Zn_i in ZnSe crystals.

The donor-doped ZnSe crystals are characterized of following parameters:

• Presence of n-type conductivity with electron concentration 10¹⁷-10¹⁸ cm^-3;
• Low level of self-indemnification of the generated vacancies;
• Introduction into a crystal of the interstitial element with formation of the dipole complexes "vacancy - interstitial atom" in amount 10¹⁷-10¹⁸ cm^-3.

The “scintillator-photodiode” detectors are applied in the majority of the modern computer tomographs. A broad dynamic range (10³-10⁴) and a small aperture are typical for these detectors.

These parameters determine the high spatial resolution of tomography systems. The short decay time and low afterglow of scintillators are necessary for rapid signal counting from great number of detectors (1000 channel and more). The afterglow must be within (0.001-0.01) % after 10 ms of X-Ray pulse.

These research results have allowed to develop reproducible technology of ZnSe scintillator production for application in inspection and medical equipments.

This work was supported by the U.S. Civilian Research and Development Foundation (CRDF), and NATO Science for Peace and Security Program (Project SfP-982823).

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1. Influence of structural defects upon electrophysical and scintillation characteristics of wide band gap ZnSe(Te) crystals for UV sensors and X-ray detectors