Induced magnetic phase transitions in ferromagnetic semiconductors under high pressure
|Rasul K. Arslanov 1, Ahmedbek Y. Mollaev 1, Ibrahimkhan K. Kamilov 1, Temirlan R. Arslanov 1, Ullubii Z. Zalibekov 1, Vladimir M. Novotorzev 2, Sergey F. Marenkin 2, Irina V. Fedorchenko 2|
1. Institute of Physics of DSC, RAS, Makhachkala 367003, Russian Federation
Magnetic phase transitions were found and studied in ferromagnetic semiconductors Cd1-xMnxGeP2 and Cd1-xMnxGeAs2 according to change of magnetic dynamic penetrability at high hydrostatic pressure up to 9 GPa. Measurement were carried out in high pressure devise of “Toroid” type, dynamic magnetic penetrability m was measured by fluctuation method, and then recalculated into magnetic susceptibility χ according to formula χ=(μ-1)/4π.
Figures show dependencies of relative magnetic susceptibility χ/χo (χo– value of magnetic susceptibility at atmospheric pressure) for samples Cd1-xMnxGeP2 and
The works has been carried out under financial support of program of Presidium of the Russian Academy of Science “Heat physics and mechanics of external energy influences and physics of heavily condensed matter”.
|Auxiliary resources (full texts, presentations, posters, etc.)|
Presentation: Poster at E-MRS Fall Meeting 2009, Symposium E, by Rasul K. Arslanov
See On-line Journal of E-MRS Fall Meeting 2009
Submitted: 2009-05-10 14:31 Revised: 2009-06-07 00:48
|© 1998-2022 pielaszek research, all rights reserved||Powered by the Conference Engine|