Magnetic phase transitions were found and studied in ferromagnetic semiconductors Cd_1-xMn_xGeP₂ and Cd_1-xMn_xGeAs₂ according to change of magnetic dynamic penetrability at high hydrostatic pressure up to 9 GPa. Measurement were carried out in high pressure devise of “Toroid” type, dynamic magnetic penetrability m was measured by fluctuation method, and then recalculated into magnetic susceptibility χ according to formula χ=(μ-1)/4π.

Figures show dependencies of relative magnetic susceptibility χ/χ_o (χ_o– value of magnetic susceptibility at atmospheric pressure) for samples Cd_1-xMn_xGeP₂ and
Cd_1-xMn_xGeAs₂. Figure at the right shows dependence χ(P)/χ_o for Cd_1-xMn_xGeAs₂. It is seen from figure that maximum χ(P)/χ_o moves to lower pressures from P=2 GPa for x=0.06 up to P=1.6 GPa for x=0.3 with increase of percent content of manganese (x). The amplitude of maximum on the on the contrary grows with increase of percent content of manganese. The same situation is observed on Cd_1-xMn_xGeP₂ with x=0.9 and x=0.18. It follows from analysis of dependence χ(P)/χ_o that there takes place spin - reorientation transition ferromagnetic - antiferromagnetic (FM–AFM) in studied samples; the presence of susceptibility shoulder after FM - AFM transition characteristical of antiferromagnetic state testifies it. There were no FM - AFM phase transitions found on base samples Cd_1-xMn_xGeAs₂ and Cd_1-xMn_xGeP₂.

The works has been carried out under financial support of program of Presidium of the Russian Academy of Science “Heat physics and mechanics of external energy influences and physics of heavily condensed matter”.

1. POSTER: Induced magnetic phase transitions in ferromagnetic semiconductors under high pressure, Microsoft Office Document, 0.1MB

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/18343 must be provided.

1. Growth, characterization and study of ferromagnetism of bismuth telluride doped with manganese
2. Comprehensive study of high temperature ferromagnetic semiconductor Cd_0.82Mn_0.18GeAs₂