Search for content and authors
 

Rubrene single-crystal FETs with spin-polarized electrodes

Wouter Naber 1Jasper Lemmens 1Anna Molinari 2Anne Arkenbout 3Chuan Du 4Alberto Morpurgo 5Wilfred G. Van der Wiel 1

1. MESA Institute for Nanotechnology, University of Twente (MESA), PO Box 217, Enschede 7500AE, Netherlands
2. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft 2628CJ, Netherlands
3. Zernike Institute for Advanced Materials, Nijenborgh 4, Groningen 9747AG, Netherlands
4. Physikalisches Institut, Universität Münster (WWU), Wilhelm Klemm-Str. 10, Münster 48149, Germany
5. Departement of Condensed Matter Physics, Ecole de Physique, 24, quai Ernest-Ansermet, Geneva CH-1205, Switzerland

Abstract

Organic materials are very interesting for spintronics, since the low spin-orbit coupling and small hyperfine interactions in these materials lead to potentially very long spin relaxation times [1]. The drawback of using organic materials for spintronic applications is the low mobility in this kind of materials. As a solution to this problem, we investigated rubrene single-crystal, with very large mobilities compared to other organic materials. For the first time, we have measured FET structures with ferromagnetic electrodes and a rubrene single-crystal spacer [2]. Our electrodes consist of an aluminum oxide tunnel barrier on top of cobalt. The tunnel barrier can be used to overcome the conductivity mismatch between the metal electrodes and the semiconducting organic spacer and prevents the oxidation of cobalt. Another important feature of this device is that it explores the possibility of fabricating devices with both FET and spin-valve functionality. Such a device has not been realized yet.

We have fabricated several devices with Co/Al2O3 electrodes. With our electrode configuration, which is shown in the inset of the figure with electrodes numbered from 1 to 12, we are able to perform 2 and 4-point measurements in the same device. Using the 2-point measurement setup we observe clean FET behaviour in our devices, as can be seen in the figure. The current is contact dominated, as we expect from the tunnel barrier in our contacts. With the 4-point measurement setup we are able to study the length dependence of the resistance. From these measurements, we extract a mobility of 0.281 cm2(Vs)-1 and a contact resistance of 2800 Wm.

figure_EMRS.jpg

Small electrode separations will be used to perform magnetoresistance measurements to study the spin injection efficiency and spin relaxation in rubrene single-crystal. Our devices are suitable to perform non-local spin-dependent measurements [3].

[1] W.J.M. Naber, S. Faez and W.G. van der Wiel, Organic Spintronics, J. Phys. D: Appl. Phys. 40, R205-R228 (2007).

[2] W.J.M. Naber et al., to be submitted

[3] M. Johnson and R.H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).

 

Legal notice
  • Legal notice:
 

Presentation: Oral at E-MRS Fall Meeting 2009, Symposium E, by Wouter Naber
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-08 16:38
Revised:   2009-06-07 00:48