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Laser-induced modification of sub-surface region of CdTe:Cl single crystals

Sergiy G. Krylyuk 1Dmytro V. Korbutyak 1Nadiya D. Vakhnyak 1Yaroslav V. Bobitsky 3Yuriy E. Syvenkyy 2Apollinariy O. Zaginey 2

1. Institute of Semiconductor Physics NAS Ukraine, Kyiv, Ukraine
2. Institute of Applied Problems of Mechanics and Mathematics (IAPMM), 3B Naukova Str., Lviv 79060, Ukraine
3. National University "Lvivska Polytechnika", Bendera St. 12, Lviv UA-79013, Ukraine

Abstract

Among different II-VI compounds, cadmium telluride attracts much attention owing to a wide spectrum of its technological applications. Irradiation of CdTe with high-absorbed laser pulses may be effectively used to alter parameters of a thin sub-surface layer of the crystal while the characteristics of the bulk remain unchanged. However, correct interpretation of laser irradiation effects is complicated by generation, redistribution and interaction of different types of defects and impurity-defect complexes. These processes are not fully understood up to now.
In this contribution, results on laser irradiation of CdTe:Cl crystals are reported. The samples were irradiated with a single pulse of a ruby laser at power densities of 2.0 - 3.0 J/cm2.
Selective etching of the irradiated samples revealed a huge increase in dislocation density (up to 108 cm-2) in the sub-surface layer with sharp edge between this layer and the bulk. Measurements of photoluminescence (PL) spectra also showed substantial changes in the PL properties of the irradiated samples. First of all, intensities of the so-called W line (around 1.586 eV) connected with excitons localized at the A-centers and the 1.4 eV band are significantly enhanced because of an increase in A-centers concentration. Appearance of new PL lines is assigned to generation of shallow defects whose nature is discussed. Influence of subsequent thermal annealing of the irradiated samples are explored as well.

 

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium F, by Sergiy G. Krylyuk
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-29 08:21
Revised:   2009-06-08 12:55