On an atomic scale, these defect complexes are distinguished by characteristic electrical field gradients (EFG) at the lattice site of the indium donor. Using perturbed γγ angular correlation spectroscopy (PAC), the presence of these EFG is detected at the site of the radioactive probe atom ¹¹¹In/¹¹¹Cd [4]. After applying different co-doping procedures (diffusion and/or implantation) in case of the combinations In-N and In-P, the formation of In-acceptor complexes has indeed been observed via the occurence of additional EFG besides the EFG_lattice.

Each complex is characterized by two slightly different EFG as is expected because of the wurtzite structure of ZnO and the different nearest neighbor distances along the c axis and in the basal plane. The efficiency of the different co-doping procedures and their dependencies on the diffusion and annealing conditions will be discussed.

This work has been supported by the Bundesministerium für Bildung und Forschung (BMBF) under Contract No. 05 KK7TS2.

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[1] T. Yamamoto and H. Katayama-Yoshida, Physica B 302-303, 155 (2001)

[2] L.G. Wang and A. Zunger, Phys. Rev. Lett. 90, 256401 (2003)

[3] L.L. Chen, J.G. Lu, Z.Z. Ye, Y.M. Lin, B.H. Zhao, Y.M. Ye, Y.S. Li, and L.P. Zhu, Appl. Phys. Lett 87, 252106 (2005)

[4] Th. Wichert, in: Stavola (ed.), Identification of Defects in Semiconductors                (Semiconductors and Semimetals, Vol. 51B, Academic Press, London 1999) p. 297

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1. Doping and Characterization of Nanocrystalline Materials