The thickness dependence of Hall mobility is explored on the films of n-PbS, grown from a vapor phase by the "hot-wall" method of on (111) BaF₂.
Experimental dependence of mobility were approximated by the in a theory expected values, which take into account carriers scattering, characteristic both for massive samples, and thin films. So, in particular, scattering taken into account on deformation potentials of acoustic and optical phonons, polarization potential of optical phonons, on the ionized admixtures and on dislocation of disparity, on a border the film-substrate, border of corns and dispersion, conditioned by surfaces effects.
It is set, that critical thickness of tapes, which the net of distribution, even 12 nm, will appear after, and dispersion on dislocation of disparity prevails to the thickness 0,4 nm, carrier scattering on border of corns characteristically for 1,5-2 nm. At films thickness anymore than 2 nm basic contribution in mobility gives scattering on the films surface. A value of free length was taken on at computations 50 nm, and as by a volume mobility the expected 400 cm² V^-1 s^-1.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/1807 must be provided.