The results of magnetoresistance (MR) measurements of Zn single crystal, with RRR=25000 in temperature range from 4.2K to 50K and in strong magnetic fields (up to 8T) are represented. Angle and temperature dependences of MR were studied on single crystal with orientation [1120]. In the angle interval of 30⁰-50⁰ degrees thin structure of MR has been detected, which is not observed at 4.2K. In this temperature region a small-angle scattering of electrons on long-wave phonons becomes effective. Such scattering is inelastic, and practically in all interval of rotation angles field has a diffusive character. The thin structure of MR appears as a result of strong intersheet electron-phonon scattering under conditions of the umklapp process. In this case a fundamental modification an electron trajectories is possible. By the analogy with the magnetic breakdown effect, this phenomenon is named the temperature breakdown. In the range of MR, there exist δ and π orbits, connected with orbits round combinations of two horizontal and two diagonal "sleeves" of the "monster". The orbits of monster "sleeves" combinations must pass near the α needle, so presumably the small electron orbit provides a "bridge" for the formation of new temperature breakdown trajectories. In this case formation of one of two kinds of the orbits is possible: two-sheet or three-sheet orbits.

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